cystech electronics corp. spec. no. : c603f3 issued date : 2011.06.08 revised date : page no. : 1/6 BTD2510F3 cystek product specification npn epitaxial planar transistor BTD2510F3 description the BTD2510F3 is a npn darlington transistor, desi gned for general purpose amplifier and low speed switching application. features: ?high bv ceo ?low v ce(sat) ?high current gain ? monolithic construction with built-in base-emitter shunt resistors ? pb-free lead plating package equivalent circuit outline absolute maximum ratings (ta=25 c) parameter symbol limits unit collector-base voltage v cbo 250 v collector-emitter voltage v ceo 250 v emitter-base voltage v ebo 10 v i c(dc) 10 collector current i c(pulse) 15 *1 a pd(t a =25 ) 2 power dissipation pd(t c =25 ) 100 w operating junction temperature range tj -55~+150 c storage temperature range tstg -55~+150 c note : *1. single pulse pw=300 s to-263 BTD2510F3 r1 4k r2 60 e c b b base c collector e emitter b c e
cystech electronics corp. spec. no. : c603f3 issued date : 2011.06.08 revised date : page no. : 2/6 BTD2510F3 cystek product specification thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 1.25 c/w thermal resistance, junction-to-ambient, max r th,j-a 62.5 c/w characteristics (ta=25 c) symbol min. typ. max. unit test conditions bv cbo 250 - - v i c =100 a, i e =0 bv ceo 250 - - v i c =1ma, i b =0 i ceo - - 100 a v ce =250v, i e =0 i cbo - - 100 a v cb =250v, i e =0 i ebo - - 2 ma v eb =5v, i c =0 *v ce(sat) 1 - - 1 v i c =4a, i b =5ma *v ce(sat) 2 - - 1.2 v i c =6a, i b =5ma *v ce(sat) 3 - - 1.4 v i c =10a, i b =250ma *v be(sat) - - 2 v i c =5a, i b =15ma *v be(on) - - 1.8 v v ce =4v, i c =8a *h fe 1 1500 - - - v ce =2v, i c =2a *h fe 2 2000 - - - v ce =4v, i c =5a *h fe 3 1500 - - - v ce =5v, i c =10a *pulse test : pulse width 380 s, duty cycle 2% ordering information device package shipping BTD2510F3 to-263 800 pcs / tape & reel (pb-free lead plating) typical characteristics current gain vs collector current 100 1000 10000 100000 0.1 1 10 100 collector current---ic(a) current gain---hfe hfe vce=2v vce=4v saturation voltage vs collector current 100 1000 10000 0.1 1 10 100 collector current ---ic(a) saturation voltage---(mv) vce sat ic=800ib ic=1200ib
cystech electronics corp. spec. no. : c603f3 issued date : 2011.06.08 revised date : page no. : 3/6 BTD2510F3 cystek product specification typical characteristics(cont.) saturation voltage vs collector current 100 1000 10000 0.1 1 10 100 collector current ---ic(a) saturation voltage---(mv) vbesat@ic=333ib on voltage vs collector current 100 1000 10000 0.01 0.1 1 10 100 collector current ---ic(ma) on voltage --- (mv) vbe(on)@vce=4v typical built-in diode characteristics 0.001 0.01 0.1 1 10 100 100 1000 10000 forward voltage---vf(mv) forward current---if(a) output capacitance vs reverse biased voltage 10 100 1000 0.1 1 10 100 reverse biased voltage---vcb(v) capacitance---(pf) cob power derating curve 0 0.5 1 1.5 2 2.5 0 50 100 150 200 ambient temperature ---ta( ) power dissipation---pd(w) power derating curve 0 20 40 60 80 100 120 0 50 100 150 200 case temperature ---tc( ) power dissipation---pd(w)
cystech electronics corp. spec. no. : c603f3 issued date : 2011.06.08 revised date : page no. : 4/6 BTD2510F3 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c603f3 issued date : 2011.06.08 revised date : page no. : 5/6 BTD2510F3 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 5 +1/-1 seconds 260 +0/-5 c recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c603f3 issued date : 2011.06.08 revised date : page no. : 6/6 BTD2510F3 cystek product specification to-263 dimension *:typical inches millimeters inches millimeters a b c d 123 k l j g h f e 2 1 2 3 i dim min. max. min. max. dim min. max. min. max. a 0.3800 0.4050 9.65 10.29 i 0.0500 0.0700 1.27 1.78 b 0.3300 0.3700 8.38 9.40 j - *0.1000 - *2.54 c - 0.0550 - 1.40 k 0.0450 0.0550 1.14 1.40 d 0.5750 0.6250 14.61 15.88 l 0.0200 0.0390 0.51 0.99 e 0.1600 0.1900 4.06 4.83 1 - - 6 8 f 0.0450 0.0550 1.14 1.40 2 - - 6 8 g 0.0900 0.1100 2.29 2.79 3 - - 0 5 h 0.0180 0.0290 0.46 0.74 notes : 1.controlling dimension : millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material : ? lead : pure tin plated. ? mold compound : epoxy resin family, flammability solid burning class:ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . style : pin 1.base 2.collector 3.emitter 3-lead plastic surface mounted package cystek package code : f3 marking : d2510 device date name code
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